Low-frequency noise characteristics of ZnO nanorods schottky barrier photodetectors

Tse Pu Chen; Sheng Joue Young; Shoou Jinn Chang; Chih Hung Hsiao; Liang Wen Ji; Yu Jung Hsu; San Lein Wu

doi:10.1109/JSEN.2013.2238228

Low-frequency noise characteristics of ZnO nanorods schottky barrier photodetectors

Tse Pu Chen, Sheng Joue Young, Shoou Jinn Chang, Chih Hung Hsiao, Liang Wen Ji, Yu Jung Hsu, San Lein Wu

研究成果: Article › 同行評審

28 引文斯高帕斯（Scopus）

摘要

A Schottky barrier photodetector with ZnO nanorods is fabricated on a glass substrate and the I-V characteristics are investigated. The ZnO nanorods are synthesized by an aqueous method, which allowed the fabricated Schottky barrier photodetector to be more sensitive in the UV region. Under 370-nm illumination, the photocurrent of the ZnO nanorod Schottky barrier photodetector is 6.56 μA and the UV-to-visible ratio is 780.8 at-1 V. In addition, the noise equivalent power and normalized detectivity (D) of the photodetector are 6.74,× 10^-13W and 3.29,× 10¹¹ cmHz0.5W^-1 at-1m V, respectively.

原文	English
文章編號	6407675
頁（從 - 到）	2115-2119
頁數	5
期刊	IEEE Sensors Journal
卷	13
發行號	6
DOIs	https://doi.org/10.1109/JSEN.2013.2238228
出版狀態	Published - 2013

All Science Journal Classification (ASJC) codes

儀器
電氣與電子工程

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10.1109/JSEN.2013.2238228

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title = "Low-frequency noise characteristics of ZnO nanorods schottky barrier photodetectors",

abstract = "A Schottky barrier photodetector with ZnO nanorods is fabricated on a glass substrate and the I-V characteristics are investigated. The ZnO nanorods are synthesized by an aqueous method, which allowed the fabricated Schottky barrier photodetector to be more sensitive in the UV region. Under 370-nm illumination, the photocurrent of the ZnO nanorod Schottky barrier photodetector is 6.56 μA and the UV-to-visible ratio is 780.8 at-1 V. In addition, the noise equivalent power and normalized detectivity (D) of the photodetector are 6.74,× 10-13W and 3.29,× 1011 cmHz0.5W-1 at-1m V, respectively.",

author = "Chen, {Tse Pu} and Young, {Sheng Joue} and Chang, {Shoou Jinn} and Hsiao, {Chih Hung} and Ji, {Liang Wen} and Hsu, {Yu Jung} and Wu, {San Lein}",

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T1 - Low-frequency noise characteristics of ZnO nanorods schottky barrier photodetectors

AU - Chen, Tse Pu

AU - Young, Sheng Joue

AU - Chang, Shoou Jinn

AU - Hsiao, Chih Hung

AU - Ji, Liang Wen

AU - Hsu, Yu Jung

AU - Wu, San Lein

PY - 2013

Y1 - 2013

N2 - A Schottky barrier photodetector with ZnO nanorods is fabricated on a glass substrate and the I-V characteristics are investigated. The ZnO nanorods are synthesized by an aqueous method, which allowed the fabricated Schottky barrier photodetector to be more sensitive in the UV region. Under 370-nm illumination, the photocurrent of the ZnO nanorod Schottky barrier photodetector is 6.56 μA and the UV-to-visible ratio is 780.8 at-1 V. In addition, the noise equivalent power and normalized detectivity (D) of the photodetector are 6.74,× 10-13W and 3.29,× 1011 cmHz0.5W-1 at-1m V, respectively.

AB - A Schottky barrier photodetector with ZnO nanorods is fabricated on a glass substrate and the I-V characteristics are investigated. The ZnO nanorods are synthesized by an aqueous method, which allowed the fabricated Schottky barrier photodetector to be more sensitive in the UV region. Under 370-nm illumination, the photocurrent of the ZnO nanorod Schottky barrier photodetector is 6.56 μA and the UV-to-visible ratio is 780.8 at-1 V. In addition, the noise equivalent power and normalized detectivity (D) of the photodetector are 6.74,× 10-13W and 3.29,× 1011 cmHz0.5W-1 at-1m V, respectively.

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Low-frequency noise characteristics of ZnO nanorods schottky barrier photodetectors

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