Low frequency noise in quantum-well GexSi1-x PMOSFET's

J. Chang, D. K. Nayak, V. K. Raman, J. C.S. Woo, J. S. Park, K. L. Wang, C. R. Viswanathan

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

This paper describes the low frequency noise behaviour of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.

原文English
頁(從 - 到)19-22
頁數4
期刊Microelectronic Engineering
15
發行號1-4
DOIs
出版狀態Published - 1991 十月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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