Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers

C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin, B. R. Huang

研究成果: Conference article

8 引文 (Scopus)

摘要

High quality SiO2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D2 lamp as the excitation source. It was found that the interface state density was only 1.1 × 1011 cm-2 eV-1. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO2 layer between AlGaN/GaN and gate metal. With a 1 μm gate length, it was found that room temperature saturated Ids, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively.

原文English
頁(從 - 到)2355-2359
頁數5
期刊Physica Status Solidi C: Conferences
發行號7
DOIs
出版狀態Published - 2003 十二月 1
事件5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
持續時間: 2003 五月 252003 五月 30

指紋

metal oxide semiconductors
heterojunctions
field effect transistors
vapor deposition
metals
luminaires
nitrides
leakage
oxides
electric potential
room temperature
excitation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

引用此文

Wang, C. K. ; Chang, S. J. ; Su, Y. K. ; Chiou, Y. Z. ; Lin, T. K. ; Huang, B. R. / Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers. 於: Physica Status Solidi C: Conferences. 2003 ; 編號 7. 頁 2355-2359.
@article{1e138d09254c4d049b4bb003e834a5fe,
title = "Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers",
abstract = "High quality SiO2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D2 lamp as the excitation source. It was found that the interface state density was only 1.1 × 1011 cm-2 eV-1. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO2 layer between AlGaN/GaN and gate metal. With a 1 μm gate length, it was found that room temperature saturated Ids, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively.",
author = "Wang, {C. K.} and Chang, {S. J.} and Su, {Y. K.} and Chiou, {Y. Z.} and Lin, {T. K.} and Huang, {B. R.}",
year = "2003",
month = "12",
day = "1",
doi = "10.1002/pssc.200303432",
language = "English",
pages = "2355--2359",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "7",

}

Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers. / Wang, C. K.; Chang, S. J.; Su, Y. K.; Chiou, Y. Z.; Lin, T. K.; Huang, B. R.

於: Physica Status Solidi C: Conferences, 編號 7, 01.12.2003, p. 2355-2359.

研究成果: Conference article

TY - JOUR

T1 - Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers

AU - Wang, C. K.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chiou, Y. Z.

AU - Lin, T. K.

AU - Huang, B. R.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - High quality SiO2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D2 lamp as the excitation source. It was found that the interface state density was only 1.1 × 1011 cm-2 eV-1. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO2 layer between AlGaN/GaN and gate metal. With a 1 μm gate length, it was found that room temperature saturated Ids, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively.

AB - High quality SiO2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D2 lamp as the excitation source. It was found that the interface state density was only 1.1 × 1011 cm-2 eV-1. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO2 layer between AlGaN/GaN and gate metal. With a 1 μm gate length, it was found that room temperature saturated Ids, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively.

UR - http://www.scopus.com/inward/record.url?scp=33644563894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644563894&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303432

DO - 10.1002/pssc.200303432

M3 - Conference article

AN - SCOPUS:33644563894

SP - 2355

EP - 2359

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 7

ER -