摘要
High quality SiO2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D2 lamp as the excitation source. It was found that the interface state density was only 1.1 × 1011 cm-2 eV-1. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO2 layer between AlGaN/GaN and gate metal. With a 1 μm gate length, it was found that room temperature saturated Ids, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 2355-2359 |
| 頁數 | 5 |
| 期刊 | Physica Status Solidi C: Conferences |
| 發行號 | 7 |
| DOIs | |
| 出版狀態 | Published - 2003 十二月 1 |
| 事件 | 5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan 持續時間: 2003 五月 25 → 2003 五月 30 |
指紋
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
引用此文
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Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers. / Wang, C. K.; Chang, S. J.; Su, Y. K.; Chiou, Y. Z.; Lin, T. K.; Huang, B. R.
於: Physica Status Solidi C: Conferences, 編號 7, 01.12.2003, p. 2355-2359.研究成果: Conference article
TY - JOUR
T1 - Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers
AU - Wang, C. K.
AU - Chang, S. J.
AU - Su, Y. K.
AU - Chiou, Y. Z.
AU - Lin, T. K.
AU - Huang, B. R.
PY - 2003/12/1
Y1 - 2003/12/1
N2 - High quality SiO2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D2 lamp as the excitation source. It was found that the interface state density was only 1.1 × 1011 cm-2 eV-1. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO2 layer between AlGaN/GaN and gate metal. With a 1 μm gate length, it was found that room temperature saturated Ids, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively.
AB - High quality SiO2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D2 lamp as the excitation source. It was found that the interface state density was only 1.1 × 1011 cm-2 eV-1. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO2 layer between AlGaN/GaN and gate metal. With a 1 μm gate length, it was found that room temperature saturated Ids, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively.
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U2 - 10.1002/pssc.200303432
DO - 10.1002/pssc.200303432
M3 - Conference article
AN - SCOPUS:33644563894
SP - 2355
EP - 2359
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 7
ER -