Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers

C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin, B. R. Huang

研究成果: Conference article同行評審

9 引文 斯高帕斯(Scopus)

摘要

High quality SiO2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D2 lamp as the excitation source. It was found that the interface state density was only 1.1 × 1011 cm-2 eV-1. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO2 layer between AlGaN/GaN and gate metal. With a 1 μm gate length, it was found that room temperature saturated Ids, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively.

原文English
頁(從 - 到)2355-2359
頁數5
期刊Physica Status Solidi C: Conferences
發行號7
DOIs
出版狀態Published - 2003
事件5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
持續時間: 2003 5月 252003 5月 30

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學

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