Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer

Y. S. Lin, Wei-Chou Hsu, C. S. Yang

研究成果: Article

6 引文 (Scopus)

摘要

An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.

原文English
頁(從 - 到)3551-3553
頁數3
期刊Applied Physics Letters
75
發行號22
DOIs
出版狀態Published - 1999 十一月 29

指紋

electrical faults
leakage
field effect transistors
electric potential
metalorganic chemical vapor deposition
heterojunctions
discontinuity
conduction bands

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

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abstract = "An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.",
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T1 - Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer

AU - Lin, Y. S.

AU - Hsu, Wei-Chou

AU - Yang, C. S.

PY - 1999/11/29

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N2 - An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.

AB - An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.

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