Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer

Y. S. Lin, W. C. Hsu, C. S. Yang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

指紋 深入研究「Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In<sub>0.5</sub>(Al<sub>0.66</sub>Ga<sub>0.34</sub>)<sub>0.5</sub>P Schottky layer」主題。共同形成了獨特的指紋。

Physics & Astronomy