Low-operating-voltage pentacene-based transistors and inverters with solution-processed barium zirconate titanate insulators

Chia Yu Wei, Wen Chieh Huang, Chih Kai Yang, Yen Yu Chang, Yeong Her Wang

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Pentacene-based organic thin-film transistors (TFTs) with solution-processed barium zirconate titanate as gate dielectrics are studied. The fabricated TFTs show a high field-effect mobility of 7.31 cm^{2V-1s} -1 at a VG of -3.6 V, a low threshold voltage of -1.60 V, and a low subthreshold slope swing of 162 mV/dec. Moreover, organic inverters with enhancement-mode load and driver are also investigated. The inverters demonstrate a high gain of 9.98, a low operating voltage of -5 V, and a low power dissipation of 1.14 \muW}. Very good agreements between simulation and experimental results are achieved.

原文English
文章編號6036147
頁(從 - 到)1755-1757
頁數3
期刊IEEE Electron Device Letters
32
發行號12
DOIs
出版狀態Published - 2011 十二月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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