Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

P. H. Chen, Yu An Chen, L. C. Chang, W. C. Lai, Cheng Huang Kuo

研究成果: Article

5 引文 (Scopus)

摘要

Abstract Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

原文English
文章編號6758
頁(從 - 到)29-32
頁數4
期刊Solid-State Electronics
109
DOIs
出版狀態Published - 2015 七月

指紋

Die casting inserts
inserts
Light emitting diodes
light emitting diodes
Electric potential
electric potential
Contact resistance
contact resistance
annealing
Aluminum Oxide
Rapid thermal annealing
Sapphire
Transparency
sapphire
Annealing
injection
output

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

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title = "Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer",
abstract = "Abstract Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98{\%} at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.",
author = "Chen, {P. H.} and Chen, {Yu An} and Chang, {L. C.} and Lai, {W. C.} and Kuo, {Cheng Huang}",
year = "2015",
month = "7",
doi = "10.1016/j.sse.2015.02.020",
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journal = "Solid-State Electronics",
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Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer. / Chen, P. H.; Chen, Yu An; Chang, L. C.; Lai, W. C.; Kuo, Cheng Huang.

於: Solid-State Electronics, 卷 109, 6758, 07.2015, p. 29-32.

研究成果: Article

TY - JOUR

T1 - Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

AU - Chen, P. H.

AU - Chen, Yu An

AU - Chang, L. C.

AU - Lai, W. C.

AU - Kuo, Cheng Huang

PY - 2015/7

Y1 - 2015/7

N2 - Abstract Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

AB - Abstract Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

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