Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer

C. H. Kuo, C. L. Yeh, P. H. Chen, W. C. Lai, C. J. Tun, J. K. Sheu, G. C. Chi

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

We have developed nitride-based multiquantum well light-emitting diodes (LEDs) with E-beam evaporated Al-doped ZnO (AZO) transparent contact layers (TCLs). With 20 mA injection current, it was found that forward voltages were 3.32, 3.33, and 4.91 V, while output powers were 10.1, 11.8, and 6.0 mW for the indium-tin-oxide LED, E-beam evaporated AZO LED, and sputter-evaporated AZO LED, respectively. The low operation voltage of the E-beam evaporated AZO LED is attributed to the deposition of low-resistivity TCLs, and the elimination of plasma damage in the p-GaN layer is attributed to use of the E-beam evaporated AZO. The high output power of the E-beam evaporated AZO LED is due to the enhancement of light extraction resulting from the high refractive index of AZO TCL.

原文English
頁(從 - 到)H269-H271
期刊Electrochemical and Solid-State Letters
11
發行號9
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

指紋

深入研究「Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer」主題。共同形成了獨特的指紋。

引用此