A new low pressure process for the growth of GaAs using triethylgallium (TEG) and a solid elemental arsenic source has been demonstrated. GaAs epitaxial layers with specular surface morphology have been obtained. N-type background free carrier concentrations on the order of 5 x 1016 cm-3 with room temperature mobilities around 4500 cm2/V/s are measured in these samples. The ability to grow GaAs epi layers with good surface morphology using a solid elemental arsenic source makes it more acceptable as a relatively safe industrial production process.
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