Low Pressure OMVPE Growth of GaAs Using a Solid Elemental Arsenic Source and TEG

Y. Tzeng, W. Jeske, C. C. Tong, S. Langford

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A new low pressure process for the growth of GaAs using triethylgallium (TEG) and a solid elemental arsenic source has been demonstrated. GaAs epitaxial layers with specular surface morphology have been obtained. N-type background free carrier concentrations on the order of 5 x 1016 cm-3 with room temperature mobilities around 4500 cm2/V/s are measured in these samples. The ability to grow GaAs epi layers with good surface morphology using a solid elemental arsenic source makes it more acceptable as a relatively safe industrial production process.

原文English
頁(從 - 到)452-455
頁數4
期刊Journal of the Electrochemical Society
135
發行號2
DOIs
出版狀態Published - 1988 二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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