Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Y. J. Lin, H. Y. Lee, F. T. Hwang, C. T. Lee

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

Ohmic contacts to n-type GaN with low contact resistance were developed by (NH4)2Sx and KOH+(NH4)2Sx surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 × 10-6 Ω-cm2 was obtained for Ti/Al contacts in an (NH4)2Sx-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)2Sx treatment conditions for both (NH4)2Sx and KOH+(NH4)2Sx-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.

原文English
頁(從 - 到)532-537
頁數6
期刊Journal of Electronic Materials
30
發行號5
DOIs
出版狀態Published - 2001 5月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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