Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy

Hai Ping Liu, In Gann Chen, Jenq Dar Tsay, Wen Yueh Liu, Yih Der Guo, Jung Tsung Hsu

研究成果: Conference article同行評審

摘要

The low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO2 dot pattern below 900°C by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [11̄01] direction increases as growth temperature decreases. At low temperature of ∼ 850°C, hexagonal GaN columnar crystals with high index facet at the top can be observed. It is proposed that the surface diffusion length of precursors, such as NH 3 and GaCl, decreases at lower temperature that reduces the probability of desorption and increase the lifetime. The condensation of Ga liquid droplets on the GaN surface will change the relative stability of {11̄01} facet. Therefore, the formation of high index planes such as {112̄2} facet on the top of hexagonal column along with the formation of stacking fault on the (0001) plane can be observed. A detailed study of the effect of growth temperature on the crystal growth mechanism will be presented.

原文English
頁(從 - 到)29-37
頁數9
期刊Materials Research Society Symposium - Proceedings
764
DOIs
出版狀態Published - 2003 一月 1
事件MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors - San Francisco, CA, United States
持續時間: 2003 四月 222003 四月 24

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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