TY - JOUR
T1 - Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering
AU - Ni, Chih Jui
AU - Hong, Franklin Chau-Nan
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N 2 were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500°C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300°C. The N:Ga ratio of the film grown at 500°C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.
AB - Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N 2 were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500°C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300°C. The N:Ga ratio of the film grown at 500°C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.
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U2 - 10.1116/1.4871472
DO - 10.1116/1.4871472
M3 - Article
AN - SCOPUS:84899545712
VL - 32
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 3
M1 - 031514
ER -