Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

Chih Jui Ni, Franklin Chau-Nan Hong

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N 2 were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500°C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300°C. The N:Ga ratio of the film grown at 500°C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

原文English
文章編號031514
期刊Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
32
發行號3
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜

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