摘要
A novel carbon-enclosed chemical vapor deposition (CE-CVD) to grow high quality monolayer graphene on Cu substrate at a low temperature of 500 °C was demonstrated. The quality of the grown graphene was investigated by Raman spectra, and the detailed growth mechanism of high quality graphene by the CE-CVD process was investigated in detail. In addition to growth of high quality monolayer graphene, a transparent hybrid few-layer graphene/CuNi mesh electrode directly synthesized by the CE-CVD process on a conventional glass substrate at the temperature of 500°C was demonstrated, showing excellent electrical properties (∼5 ω/ @ 93.5% transparency) and ready to be used for optical applications without further transfer process. The few-layer graphene/CuNi mesh electrode shows no electrical degradation even after 2 h annealing in pure oxygen at an elevated temperature of ∼300°C. Furthermore, the few-layer graphene/CuNi mesh electrode delivers an excellent corrosion resistance in highly corrosive solutions such as electroplating process and achieves a good nucleation rate for the deposited film. Findings suggest that the low temperature few-layer graphene/CuNi mesh electrode synthesized by the CE-CVD process is an excellent candidate to replace indium tin oxide (ITO) as transparent conductive material (TCM) in the next generation.
原文 | English |
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頁(從 - 到) | 1646-1655 |
頁數 | 10 |
期刊 | Chemistry of Materials |
卷 | 27 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 2015 3月 10 |
All Science Journal Classification (ASJC) codes
- 一般化學
- 一般化學工程
- 材料化學