Low-temperature growth of polycrystalline silicon films using SiCl4/H2 in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 μm with a thickness of 0.5 μm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.
|頁（從 - 到）||L1207-L1210|
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||Published - 2001 十一月 15|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)