Low temperature growth of polycrystalline silicon films by hot-wire chemical vapor deposition using SiCl4/H2 gases

Te Chi Wong, Jih Jen Wu

研究成果: Letter同行評審

9 引文 斯高帕斯(Scopus)

摘要

Low-temperature growth of polycrystalline silicon films using SiCl4/H2 in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 μm with a thickness of 0.5 μm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.

原文English
頁(從 - 到)L1207-L1210
期刊Japanese Journal of Applied Physics, Part 2: Letters
40
發行號11 B
DOIs
出版狀態Published - 2001 十一月 15

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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