The low-temperature growth of well-aligned β-Ga2O 3 nanowires from a single-source organometallic precursor is discussed. The selection of the appropriate catalyst for the vapor-liquid-solid (VLS) reaction proceeding at low temperatures, the ability to provide sufficient Ga and O vapors and the selection of the correct substrate are also demonstrated. Structural characterization of the Ga2O3 nanowires by X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed that the nanowires are oriented in the (2̄01) direction. The selective formation of well-aligned Ga2O3 nanowire arrays is achieved on an Au-patterned sapphire (0001) substrate.
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