Low-Temperature Growth of Well-Aligned β-Ga₂O₃ Nanowires from a Single-Source Organometallic Precursor

The low-temperature growth of well-aligned β-Ga₂O ₃ nanowires from a single-source organometallic precursor is discussed. The selection of the appropriate catalyst for the vapor-liquid-solid (VLS) reaction proceeding at low temperatures, the ability to provide sufficient Ga and O vapors and the selection of the correct substrate are also demonstrated. Structural characterization of the Ga₂O₃ nanowires by X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed that the nanowires are oriented in the (2̄01) direction. The selective formation of well-aligned Ga₂O₃ nanowire arrays is achieved on an Au-patterned sapphire (0001) substrate.