Low-Temperature Growth of Well-Aligned β-Ga2O3 Nanowires from a Single-Source Organometallic Precursor

Ko Wei Chang, Jih-Jen Wu

研究成果: Article同行評審

108 引文 斯高帕斯(Scopus)

摘要

The low-temperature growth of well-aligned β-Ga2O 3 nanowires from a single-source organometallic precursor is discussed. The selection of the appropriate catalyst for the vapor-liquid-solid (VLS) reaction proceeding at low temperatures, the ability to provide sufficient Ga and O vapors and the selection of the correct substrate are also demonstrated. Structural characterization of the Ga2O3 nanowires by X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed that the nanowires are oriented in the (2̄01) direction. The selective formation of well-aligned Ga2O3 nanowire arrays is achieved on an Au-patterned sapphire (0001) substrate.

原文English
頁(從 - 到)545-549
頁數5
期刊Advanced Materials
16
發行號6
DOIs
出版狀態Published - 2004 3月 18

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

指紋

深入研究「Low-Temperature Growth of Well-Aligned β-Ga2O3 Nanowires from a Single-Source Organometallic Precursor」主題。共同形成了獨特的指紋。

引用此