A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm2 for a 2-mm-cavity device and a transparency current density of 66 A/cm2 were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm-1, respectively.
|頁（從 - 到）||7485-7487|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2005 十月 11|
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)