Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

I. Liang Chen, Wei Chou Hsu, Hao Chung Kuo, Hsin Chieh Yu, Chia Pin Sung, Chen Ming Lu, Chih Hung Chiou, Jin Mei Wang, Yu Hsiang Chang, Tsin Dong Lee, Jyh Shyang Wang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm2 for a 2-mm-cavity device and a transparency current density of 66 A/cm2 were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm-1, respectively.

原文English
頁(從 - 到)7485-7487
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
發行號10
DOIs
出版狀態Published - 2005 十月 11

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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