Low threshold current, low resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Hsin Chieh Yu, Jyh Shyang Wang, Yan Kuin Su, Shoou Jinn Chang, Hao Chung Kuo, Fang I. Lai, Y. H. Chang, Hong Pin D. Yang

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The processing technology of 1.3μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 μm oxide-confined aperture are 0.7mA, which correspond to 890A/cm2 threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 μW. The series resistance is 85 Ω which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.

原文English
主出版物標題Vertical-Cavity Surface-Emitting Lasers XI
DOIs
出版狀態Published - 2007
事件Vertical-Cavity Surface-Emitting Lasers XI - San Jose, CA, United States
持續時間: 2007 一月 242007 一月 25

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6484
ISSN(列印)0277-786X

Other

OtherVertical-Cavity Surface-Emitting Lasers XI
國家/地區United States
城市San Jose, CA
期間07-01-2407-01-25

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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