@inproceedings{1d7084fb983b45c0ab2c33e34a4b4afd,
title = "Low threshold current, low resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE",
abstract = "The processing technology of 1.3μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 μm oxide-confined aperture are 0.7mA, which correspond to 890A/cm2 threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 μW. The series resistance is 85 Ω which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.",
author = "Yu, \{Hsin Chieh\} and Wang, \{Jyh Shyang\} and Su, \{Yan Kuin\} and Chang, \{Shoou Jinn\} and Kuo, \{Hao Chung\} and Lai, \{Fang I.\} and Chang, \{Y. H.\} and Yang, \{Hong Pin D.\}",
year = "2007",
doi = "10.1117/12.697732",
language = "English",
isbn = "0819465976",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Vertical-Cavity Surface-Emitting Lasers XI",
note = "Vertical-Cavity Surface-Emitting Lasers XI ; Conference date: 24-01-2007 Through 25-01-2007",
}