@inproceedings{de417cf6301146f99179988df79ec988,
title = "Low threshold voltage and high drive current poly-silicon thin film transistors using ytterbium metal gate and LaALO3 dielectric",
abstract = "We have demonstrated high-performance metal-gate/high-κ Ytterbium/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-κ LaAlO3 dielectric. The high breakdown voltage is also due to the high-κ LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.",
author = "Hung, {B. F.} and Wu, {C. H.} and Albert Chin and Wang, {S. J.} and Lin, {J. W.} and Hsieh, {I. J.}",
year = "2007",
language = "English",
isbn = "9787561752289",
series = "AD'07 - Proceedings of Asia Display 2007",
pages = "1190--1193",
booktitle = "AD'07 - Proceedings of Asia Display 2007",
note = "Asia Display 2007, AD'07 ; Conference date: 12-03-2007 Through 16-03-2007",
}