@article{d0cb7d8f3bdc4f6a8ea8bcd3cccdda08,
title = "Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM",
abstract = "This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of < 1 pJ for write times of 15 ns.",
author = "{Khalili Amiri}, P. and Zeng, {Z. M.} and P. Upadhyaya and G. Rowlands and H. Zhao and Krivorotov, {I. N.} and Wang, {J. P.} and Jiang, {H. W.} and Katine, {J. A.} and J. Langer and K. Galatsis and Wang, {K. L.}",
note = "Funding Information: Manuscript received September 5, 2010; revised September 23, 2010; accepted September 24, 2010. Date of publication November 9, 2010; date of current version December 27, 2010. This work was supported in part by the Defense Advanced Research Projects Agency STT-RAM Program and in part by the Nanoelectronics Research Initiative through the Western Institute of Nanoelectronics. The review of this letter was arranged by Editor L. Selmi.",
year = "2011",
month = jan,
doi = "10.1109/LED.2010.2082487",
language = "English",
volume = "32",
pages = "57--59",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}