With additional precursor soaking, a thin Al2O3 dielectric layer can be grown on mono-layer MoS2 by using atomic layer deposition (ALD). Similar optical characteristics are observed before and after ALD growth for the mono-layer MoS2, which indicates that minor damage to the thin 2D material film is introduced during the growth procedure. With the thin separation layer, luminescence enhancement and dual-color emission are observed by transferring MoS2 and WS2 mono-layer 2D materials to 5 nm Al2O3/mono-layer MoS2 samples, respectively. The results demonstrate that with careful treatment of the interfaces of 2D crystals with other materials, different stacked structures can be established.
All Science Journal Classification (ASJC) codes
- 化學 (全部)