摘要
With additional precursor soaking, a thin Al2O3 dielectric layer can be grown on mono-layer MoS2 by using atomic layer deposition (ALD). Similar optical characteristics are observed before and after ALD growth for the mono-layer MoS2, which indicates that minor damage to the thin 2D material film is introduced during the growth procedure. With the thin separation layer, luminescence enhancement and dual-color emission are observed by transferring MoS2 and WS2 mono-layer 2D materials to 5 nm Al2O3/mono-layer MoS2 samples, respectively. The results demonstrate that with careful treatment of the interfaces of 2D crystals with other materials, different stacked structures can be established.
原文 | English |
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文章編號 | 365702 |
期刊 | Nanotechnology |
卷 | 31 |
發行號 | 36 |
DOIs | |
出版狀態 | Published - 2020 9月 4 |
All Science Journal Classification (ASJC) codes
- 生物工程
- 化學 (全部)
- 材料科學(全部)
- 材料力學
- 機械工業
- 電氣與電子工程