Luminescence of the InGaN/GaN blue light-emitting diodes

J. K. Sheu, T. W. Yeh, G. C. Chi, M. J. Jou

研究成果: Conference article同行評審

摘要

InGaN/GaN double heterostructure (DH) and multiple quantum wells (MQW) light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibit a blue-shift phenomenon when increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects.

原文English
頁(從 - 到)143-150
頁數8
期刊Proceedings of SPIE - The International Society for Optical Engineering
4079
出版狀態Published - 2000 一月 1
事件Display Technologies III - Taipei, Taiwan
持續時間: 2000 七月 262000 七月 27

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

指紋

深入研究「Luminescence of the InGaN/GaN blue light-emitting diodes」主題。共同形成了獨特的指紋。

引用此