InGaN/GaN double heterostructure (DH) and multiple quantum wells (MQW) light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibit a blue-shift phenomenon when increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects.
|頁（從 - 到）||143-150|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 2000 一月 1|
|事件||Display Technologies III - Taipei, Taiwan|
持續時間: 2000 七月 26 → 2000 七月 27
All Science Journal Classification (ASJC) codes