Heteroepitaxial growth of m -plane (10 1- 0) InN film on (100) -γ -LiAlO2 (LAO) substrate has been realized by plasma-assisted molecular-beam epitaxy. Surface treatment of LAO substrate plays an important role in controlling the resultant phase and purity of m -plane InN. X-ray diffraction, reflection high-energy electron diffraction, electron back scatter diffraction, and transmission electron microscopy (TEM) studies revealed formation of pure m -plane InN film using substrate preannealed at 800 °C but without any nitridation. In contrast, using substrate with nitridation but otherwise identical pretreatment and growth conditions, c -plane (0001) InN columnar structure was grown, instead of m -plane InN film. Structural anisotropy of the m -plane InN epitaxied on LAO is attributed to the I 1 type base-plane stacking faults according to the modified Williamson-Hall and TEM analyses. A rectangular-to-rectangular atomic stacking sequence and a commensurately lattice-matched condition in epitaxial direction of [1 2- 10] InN  LAO with a small misfit strain of ∼0.2% are proposed to realize this heteroepitaxy. Angle-dependent polarized UV-Raman spectra showed that all the InN phonon modes follow Raman selection rule well. Strong polarization anisotropy of photoluminescence (PL) emission located at ∼0.63 eV was observed, as evidenced by a high polarization degree of 87% of the m -plane InN determined by infrared polarized PL spectroscopy.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)