Magnetic tunnel junctions and their applications in non-volatile circuits

Juan G. Alzate, Pedram Khalili Amiri, Kang L. Wang

研究成果: Chapter

2 引文 斯高帕斯(Scopus)

摘要

Magnetic tunnel junctions (MTJs) have become the basic building blocks of spintronic nonvolatile circuits due to their large tunneling magnetoresistance (TMR) values for readout and the possibility to electrically write information into the devices. This chapter focuses on evaluating the performance, challenges,and design parameters of MTJ devices for nonvolatile circuits. The reading, writing, and storing functions are evaluated under the light of the different requirements of nonvolatile circuit applications and utilizing new developments in the design and realization of state-of-the-art MTJs. Finally, examples of the role of MTJs in CMOS-based and beyond-CMOS computing are presented.

原文English
主出版物標題Handbook of Spintronics
發行者Springer Netherlands
頁面1127-1171
頁數45
ISBN(電子)9789400768925
ISBN(列印)9789400768918
DOIs
出版狀態Published - 2015 9月 16

All Science Journal Classification (ASJC) codes

  • 一般電腦科學
  • 一般工程
  • 一般材料科學

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