Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure

Yabin Fan, Pramey Upadhyaya, Xufeng Kou, Murong Lang, So Takei, Zhenxing Wang, Jianshi Tang, Liang He, Li Te Chang, Mohammad Montazeri, Guoqiang Yu, Wanjun Jiang, Tianxiao Nie, Robert N. Schwartz, Yaroslav Tserkovnyak, Kang L. Wang

研究成果: Article同行評審

576 引文 斯高帕斯(Scopus)

摘要

Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures (HMFHs) have drawn great attention to spin torques arising from large spin-orbit coupling (SOC). Given the intrinsic strong SOC, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics. Here we demonstrate experimentally the magnetization switching through giant SOT induced by an in-plane current in a chromium-doped TI bilayer heterostructure. The critical current density required for switching is below 8.9 × 10 4 A cm -2 at 1.9 K. Moreover, the SOT is calibrated by measuring the effective spin-orbit field using second-harmonic methods. The effective field to current ratio and the spin-Hall angle tangent are almost three orders of magnitude larger than those reported for HMFHs. The giant SOT and efficient current-induced magnetization switching exhibited by the bilayer heterostructure may lead to innovative spintronics applications such as ultralow power dissipation memory and logic devices.

原文English
頁(從 - 到)699-704
頁數6
期刊Nature Materials
13
發行號7
DOIs
出版狀態Published - 2014 七月

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

指紋

深入研究「Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure」主題。共同形成了獨特的指紋。

引用此