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Magnetoexciton in the thin AlAs/GaAs quantum well

  • C. P. Chang
  • , R. B. Chen
  • , Yan Ten Lu

研究成果: Article同行評審

1   連結會在新分頁中開啟 引文 斯高帕斯(Scopus)

摘要

We report a theoretical study on the magneto-optical property of a thin AlAs/GaAs quantum well. Our model includes both the excitonic effect and Γ-X valley mixing. A delta-like interfacial potential introduced by H.C. Liu [Appl. Phys. Lett., 51, 1987, 1019] is employed to describe the Γ-X mixing, which leads to a set of coupled differential equations in mixing type-I and type-II excitons. The eigenvalues and eigenfunctions thus obtained are then used to calculate the absorption spectrums for various strengths of the perpendicular magnetic field. Our result shows a field induced Type-I to Type-II magnetoexciton transition at 24 T for AlAs(25 Å)/GaAs(31 Å) quantum well.

原文English
頁(從 - 到)99-104
頁數6
期刊Solid State Communications
108
發行號2
DOIs
出版狀態Published - 1998 8月 21

All Science Journal Classification (ASJC) codes

  • 一般化學
  • 凝聚態物理學
  • 材料化學

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