Magnetotransport study on the defect levels of delta-doped in 0.22Ga0.78As/GaAs quantum wells

Ikai Lo, J. R. Lian, H. Y. Wang, M. H. Gau, J. K. Tsai, Jih Chen Chiang, Y. J. Li, W. C. Hsu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

We have studied the electronic properties of delta-doped Ino 0.22Ga0.78As/GaAs quantum wells (QWs) by van der Pauw Hall measurements and Shubnikov-de Haas measurements. From the temperature-dependent van der Pauw Hall measurements, we observed two kinds of donors, which have binding energies of 104±7 and 9.6±0.1 meV. After inserting In 0.1Ga0.9As layers between the In0.22Ga 0.78As and GaAs layers, a single donor with binding energy of 50±2 meV was observed. The carrier concentration determined by SdH measurements did not change after the QWs were illuminated at low temperature, which indicates that these deep donors could not produce a persistent photoconductivity in delta-doped In0.22Ga0.78As/GaAs QWs.

原文English
文章編號063712
期刊Journal of Applied Physics
100
發行號6
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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