Major Implantation-Induced Defects in Conventional and Rapid Annealed Silicon Implanted LEC-Grown GaAs

A. Bindol; K. L. Wang; S. J. Chong; O. M. Stafsudd

doi:10.1149/1.2085544

Major Implantation-Induced Defects in Conventional and Rapid Annealed Silicon Implanted LEC-Grown GaAs

A. Bindol, K. L. Wang, S. J. Chong, O. M. Stafsudd

研究成果: Article › 同行評審

摘要

A major deep donor besides EL2 is found in Si implanted GaAs. This level emerges to be an implantation-induced defect and lies at an energy between E_c -0.88 eV and E_c -1.09 eV. The EL2 defect distributions in conventional and rapid thermal annealed samples were also investigated. From the experimental defect distribution data, stress is believed to create dislocations which promote EL2 formation in rapid annealed samples, a stoichiometric process is found to be the major mechanism for creating EL2. The dependence of EL2 on the annealing temperature and implantation fluence are also obtained.

原文	English
頁（從 - 到）	222-225
頁數	4
期刊	Journal of the Electrochemical Society
卷	138
發行號	1
DOIs	https://doi.org/10.1149/1.2085544
出版狀態	Published - 1991

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
材料化學
表面、塗料和薄膜
電化學
可再生能源、永續發展與環境

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T1 - Major Implantation-Induced Defects in Conventional and Rapid Annealed Silicon Implanted LEC-Grown GaAs

AU - Bindol, A.

AU - Wang, K. L.

AU - Chong, S. J.

AU - Stafsudd, O. M.

PY - 1991

Y1 - 1991

N2 - A major deep donor besides EL2 is found in Si implanted GaAs. This level emerges to be an implantation-induced defect and lies at an energy between Ec -0.88 eV and Ec -1.09 eV. The EL2 defect distributions in conventional and rapid thermal annealed samples were also investigated. From the experimental defect distribution data, stress is believed to create dislocations which promote EL2 formation in rapid annealed samples, a stoichiometric process is found to be the major mechanism for creating EL2. The dependence of EL2 on the annealing temperature and implantation fluence are also obtained.

AB - A major deep donor besides EL2 is found in Si implanted GaAs. This level emerges to be an implantation-induced defect and lies at an energy between Ec -0.88 eV and Ec -1.09 eV. The EL2 defect distributions in conventional and rapid thermal annealed samples were also investigated. From the experimental defect distribution data, stress is believed to create dislocations which promote EL2 formation in rapid annealed samples, a stoichiometric process is found to be the major mechanism for creating EL2. The dependence of EL2 on the annealing temperature and implantation fluence are also obtained.

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Major Implantation-Induced Defects in Conventional and Rapid Annealed Silicon Implanted LEC-Grown GaAs

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