Manganese-doped AlGaN/GaN heterojunction solar cells with intermediate band absorption

Jinn Kong Sheu, Po Cheng Chen, Cheng Lun Shin, Ming Lun Lee, Po Hsun Liao, Wei Chih Lai

研究成果: Article

7 引文 (Scopus)

摘要

In this study, we demonstrate the Al0.1Ga0.9N/GaN heterojunction solar cells with a Mn (manganese)-doped active layer. Under a 1-sun AM1.5 G illumination condition, the devices exhibited an improved conversion efficiency by a magnitude of 5 compared to the cells without Mn doping in the active layer. This dramatic increase in conversion efficiency is attributed to the fact that the Mn-related energy states cause subband gap photon absorption and thereby contribute an extra photocurrent. On the basis of electroluminescence spectra and the spectral responses obtained from the Mn-doped devices, it is shown that the Mn-related energy states form a partially filled intermediate band (IB) within the bandgap of the Al0.1Ga0.9N active layer; the IB induces subband gap absorption, leading to an increase of short-circuit current in the Mn-doped Al0.1Ga0.9N/GaN heterojunction solar cells compared to the devices without Mn doping in the active layer.

原文English
頁(從 - 到)727-732
頁數6
期刊Solar Energy Materials and Solar Cells
157
DOIs
出版狀態Published - 2016 十二月 1

指紋

Manganese
Heterojunctions
Absorption spectra
Solar cells
Electron energy levels
Conversion efficiency
Doping (additives)
Electroluminescence
aluminum gallium nitride
Photocurrents
Short circuit currents
Sun
Energy gap
Photons
Lighting

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

引用此文

Sheu, Jinn Kong ; Chen, Po Cheng ; Shin, Cheng Lun ; Lee, Ming Lun ; Liao, Po Hsun ; Lai, Wei Chih. / Manganese-doped AlGaN/GaN heterojunction solar cells with intermediate band absorption. 於: Solar Energy Materials and Solar Cells. 2016 ; 卷 157. 頁 727-732.
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abstract = "In this study, we demonstrate the Al0.1Ga0.9N/GaN heterojunction solar cells with a Mn (manganese)-doped active layer. Under a 1-sun AM1.5 G illumination condition, the devices exhibited an improved conversion efficiency by a magnitude of 5 compared to the cells without Mn doping in the active layer. This dramatic increase in conversion efficiency is attributed to the fact that the Mn-related energy states cause subband gap photon absorption and thereby contribute an extra photocurrent. On the basis of electroluminescence spectra and the spectral responses obtained from the Mn-doped devices, it is shown that the Mn-related energy states form a partially filled intermediate band (IB) within the bandgap of the Al0.1Ga0.9N active layer; the IB induces subband gap absorption, leading to an increase of short-circuit current in the Mn-doped Al0.1Ga0.9N/GaN heterojunction solar cells compared to the devices without Mn doping in the active layer.",
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Manganese-doped AlGaN/GaN heterojunction solar cells with intermediate band absorption. / Sheu, Jinn Kong; Chen, Po Cheng; Shin, Cheng Lun; Lee, Ming Lun; Liao, Po Hsun; Lai, Wei Chih.

於: Solar Energy Materials and Solar Cells, 卷 157, 01.12.2016, p. 727-732.

研究成果: Article

TY - JOUR

T1 - Manganese-doped AlGaN/GaN heterojunction solar cells with intermediate band absorption

AU - Sheu, Jinn Kong

AU - Chen, Po Cheng

AU - Shin, Cheng Lun

AU - Lee, Ming Lun

AU - Liao, Po Hsun

AU - Lai, Wei Chih

PY - 2016/12/1

Y1 - 2016/12/1

N2 - In this study, we demonstrate the Al0.1Ga0.9N/GaN heterojunction solar cells with a Mn (manganese)-doped active layer. Under a 1-sun AM1.5 G illumination condition, the devices exhibited an improved conversion efficiency by a magnitude of 5 compared to the cells without Mn doping in the active layer. This dramatic increase in conversion efficiency is attributed to the fact that the Mn-related energy states cause subband gap photon absorption and thereby contribute an extra photocurrent. On the basis of electroluminescence spectra and the spectral responses obtained from the Mn-doped devices, it is shown that the Mn-related energy states form a partially filled intermediate band (IB) within the bandgap of the Al0.1Ga0.9N active layer; the IB induces subband gap absorption, leading to an increase of short-circuit current in the Mn-doped Al0.1Ga0.9N/GaN heterojunction solar cells compared to the devices without Mn doping in the active layer.

AB - In this study, we demonstrate the Al0.1Ga0.9N/GaN heterojunction solar cells with a Mn (manganese)-doped active layer. Under a 1-sun AM1.5 G illumination condition, the devices exhibited an improved conversion efficiency by a magnitude of 5 compared to the cells without Mn doping in the active layer. This dramatic increase in conversion efficiency is attributed to the fact that the Mn-related energy states cause subband gap photon absorption and thereby contribute an extra photocurrent. On the basis of electroluminescence spectra and the spectral responses obtained from the Mn-doped devices, it is shown that the Mn-related energy states form a partially filled intermediate band (IB) within the bandgap of the Al0.1Ga0.9N active layer; the IB induces subband gap absorption, leading to an increase of short-circuit current in the Mn-doped Al0.1Ga0.9N/GaN heterojunction solar cells compared to the devices without Mn doping in the active layer.

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