Manipulation of the crystallinity boundary of pulsed laser deposited high-k HfO2-TiO2-Y2O3 combinatorial thin films

J. L. Klamo, P. K. Schenck, P. G. Burke, K. S. Chang, M. L. Green

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Combinatorial library films of HfO2-TiO2-Y 2O3, a high-k dielectric system, grown by pulsed laser deposition, exhibit visible boundary lines separating amorphous and crystalline phases. By changing processing space parameters, specifically substrate temperature during deposition, as well as the composition of the library film, we are able to manipulate the boundary and hence, the microstructural properties of the film. High-throughput x-ray diffraction and spectroscopic reflectometry are effective tools for measuring the properties of the resulting library films altered via these changes in processing. Electrical measurements confirm that the dielectric constant of the library films is composition and microstructure dependent.

原文English
文章編號054101
期刊Journal of Applied Physics
107
發行號5
DOIs
出版狀態Published - 2010

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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