Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips

Chwan Ying Lee, Kwang Lung Lin

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.

原文English
頁(從 - 到)63-75
頁數13
期刊Thin Solid Films
229
發行號1
DOIs
出版狀態Published - 1993 6月 5

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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