Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy

Tzer En Nee; Nien Tze Yeh; Jen Inn Chyi; Ching Ting Lee

doi:10.1016/S0038-1101(98)00026-4

Matrix-dependent structural and photoluminescence properties of In_0.5Ga_0.5As quantum dots grown by molecular beam epitaxy

Tzer En Nee, Nien Tze Yeh, Jen Inn Chyi, Ching Ting Lee

光電科學與工程學系

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

The properties of the self-organized In_0.5Ga_0.5As quantum dots on In_0.1Ga_0.9As, GaAs, and In_0.1A1_0.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In_0.5Ga_0.5As quantum dots in In_0.1Ga_0.9As matrix exhibit higher intensity as compared to those in GaAs and In_0.1Al_0.9As matrices. It is also found that the activation energy of the In_0.5Ga_0.5As quantum dots in GaAs matrix is higher than that of the dots in In_0.1Ga_0.9As matrix. Whereas the quantum dots in In_0.1Al_0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.

原文	English
頁（從 - 到）	1331-1334
頁數	4
期刊	Solid-State Electronics
卷	42
發行號	7-8
DOIs	https://doi.org/10.1016/S0038-1101(98)00026-4
出版狀態	Published - 1998

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1016/S0038-1101(98)00026-4

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@article{c658eac03da9493882deca33515a9441,

title = "Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy",

abstract = "The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.",

author = "Nee, {Tzer En} and Yeh, {Nien Tze} and Chyi, {Jen Inn} and Lee, {Ching Ting}",

note = "Funding Information: The authors would like to thank Dr. J.-L. Shieh, Mr. J.-W. Pan and Mr. P.-W. Shiao for their assistance and fruitful discussion in MBE growth and characterization. The support of the MBE laboratory of the Center for Optical Sciences at National Central University is gratefully acknowledged. This work was supported by the National Science Council of R.O.C. under contract NSC 86-2215-E-008-007.",

year = "1998",

doi = "10.1016/S0038-1101(98)00026-4",

language = "English",

volume = "42",

pages = "1331--1334",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "7-8",

}

TY - JOUR

T1 - Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy

AU - Nee, Tzer En

AU - Yeh, Nien Tze

AU - Chyi, Jen Inn

AU - Lee, Ching Ting

N1 - Funding Information: The authors would like to thank Dr. J.-L. Shieh, Mr. J.-W. Pan and Mr. P.-W. Shiao for their assistance and fruitful discussion in MBE growth and characterization. The support of the MBE laboratory of the Center for Optical Sciences at National Central University is gratefully acknowledged. This work was supported by the National Science Council of R.O.C. under contract NSC 86-2215-E-008-007.

PY - 1998

Y1 - 1998

N2 - The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.

AB - The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.

UR - http://www.scopus.com/inward/record.url?scp=0032120014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032120014&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(98)00026-4

DO - 10.1016/S0038-1101(98)00026-4

M3 - Article

AN - SCOPUS:0032120014

SN - 0038-1101

VL - 42

SP - 1331

EP - 1334

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 7-8

ER -

Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy

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Matrix-dependent structural and photoluminescence properties of In_0.5Ga_0.5As quantum dots grown by molecular beam epitaxy