MBE grown GaAs-InGaAs quantum-well resonant-Tunneling switching device

Wen Chau Liu, Der Feng Guo, Lih Wen Laih

研究成果: Paper

原文English
DOIs
出版狀態Published - 1994 一月 1
事件1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
持續時間: 1994 七月 121994 七月 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
國家Taiwan
城市Hsinchu
期間94-07-1294-07-15

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此

Liu, W. C., Guo, D. F., & Laih, L. W. (1994). MBE grown GaAs-InGaAs quantum-well resonant-Tunneling switching device. 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771306