MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor

K. F. Yarn, C. Y. Chang, Y. H. Wang, R. L. Wang

研究成果: Paper同行評審

摘要

A GaAs voltage-controlled negative differential resistance power transistor using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE) are presented. The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE=0.5V at room temperature has been obtained. This is proposed to be due to the bipolar-unipolar transition reaction. For power consideration, it can be compared with resonant tunneling hot electron transistors.

原文English
頁面55-58
頁數4
DOIs
出版狀態Published - 1990
事件22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
持續時間: 1990 八月 221990 八月 24

Other

Other22nd International Conference on Solid State Devices and Materials
城市Sendai, Jpn
期間90-08-2290-08-24

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

指紋

深入研究「MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor」主題。共同形成了獨特的指紋。

引用此