MBE Grown n+-i-δ(p+)-i-n+ GaAs V-Groove Barrier Transistor

C. Y. Chang, Y. H. Wang, W. C. Liu, S. A. Liao

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.

原文English
頁(從 - 到)123-125
頁數3
期刊IEEE Electron Device Letters
6
發行號3
DOIs
出版狀態Published - 1985 三月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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