MBE grown undoped superlattice gate and modulation-doped buffer structure for power FET applications

W. C. Liu, W. C. Hsu, W. S. Lour, R. L. Wang, R. L. Chang

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2 引文 斯高帕斯(Scopus)

摘要

A new power FET with a hybrid (MESFET and MD) operation mechanism has been fabricated successfully. The insertion of a modulation-doped (MD) structure between the AlGaAs buffer and GaAs active layer gives high output current and high transconductance. By reducing the gate length to 1 µm, transconductance of up to 340 mS/mm can be expected. Furthermore, the use of an undoped AlGaAs/GaAs superlattice “gate insulator” provides low leakage current and much higher gate breakdown voltage (>30 V). From the experimental results, it is obvious that the proposed structure is suitable for high power applications.

原文English
頁(從 - 到)L904-L906
期刊Japanese Journal of Applied Physics
28
發行號6A
DOIs
出版狀態Published - 1989 六月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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