@article{be8d5682722c4eaf99978577a59d02fd,
title = "MBE growth of ZnSe nanowires on oxidized silicon substrate",
abstract = "We report the growth of single crystalline ZnSe nanowires on oxidized Si(100) substrates by molecular-beam epitaxy using Au nano-particles as the catalysts. It was found that average length decreased while the average diameter increased as we increased the temperature from 230 to 320 {ring operator}C. It was also found that crystal quality of the ZnSe nanowires prepared at 320 {ring operator}C was poorer than the ZnSe nanowires prepared at 230 {ring operator}C and 280 {ring operator}C.",
author = "Hsiao, {C. H.} and Chang, {S. J.} and Wang, {S. B.} and Hung, {S. C.} and Chang, {S. P.} and Li, {T. C.} and Lin, {W. J.} and Huang, {B. R.}",
note = "Funding Information: This work was supported in part by the Taiwan Semiconductor Manufacturing Company, Ltd. (TSMC), in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700), and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",
year = "2009",
month = oct,
doi = "10.1016/j.spmi.2009.04.005",
language = "English",
volume = "46",
pages = "572--577",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "4",
}