MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode

S. P. Chang; R. W. Chuang; S. J. Chang; Y. Z. Chiou; C. Y. Lu

doi:10.1016/j.tsf.2009.03.059

MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode

S. P. Chang, R. W. Chuang, S. J. Chang, Y. Z. Chiou, C. Y. Lu

研究成果: Article › 同行評審

43 引文斯高帕斯（Scopus）

摘要

The growth, fabrication, and subsequent electroluminescence (EL) characterization of an n-ZnO/p-GaN heterojunction light-emitting diode prepared on c-Al₂O₃ substrate are presented. The diode-like I-V characteristics and room temperature EL spectrum with an intense broadband emission in the yellow-green spectral region has been observed with forward bias applied. Photoluminescence (PL) and Raman spectra of the n-ZnO and p-GaN films were also measured. By comparing PL and EL spectra, it was concluded that the deep-level defect-related emission mainly originated from the GaN epitaxial layer.

原文	English
頁（從 - 到）	5054-5056
頁數	3
期刊	Thin Solid Films
卷	517
發行號	17
DOIs	https://doi.org/10.1016/j.tsf.2009.03.059
出版狀態	Published - 2009 7月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2009.03.059

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@article{a0f7ad1fad89404a8e333420398a0b93,

title = "MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode",

abstract = "The growth, fabrication, and subsequent electroluminescence (EL) characterization of an n-ZnO/p-GaN heterojunction light-emitting diode prepared on c-Al2O3 substrate are presented. The diode-like I-V characteristics and room temperature EL spectrum with an intense broadband emission in the yellow-green spectral region has been observed with forward bias applied. Photoluminescence (PL) and Raman spectra of the n-ZnO and p-GaN films were also measured. By comparing PL and EL spectra, it was concluded that the deep-level defect-related emission mainly originated from the GaN epitaxial layer.",

author = "Chang, {S. P.} and Chuang, {R. W.} and Chang, {S. J.} and Chiou, {Y. Z.} and Lu, {C. Y.}",

note = "Funding Information: This work was supported by National Science Council under contract number NSC 95-2221-E-006-314 and NSC 95-2221-E-006-357-MY3. In addition, a research grant provided by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700), is also gratefully acknowledged.",

year = "2009",

month = jul,

day = "1",

doi = "10.1016/j.tsf.2009.03.059",

language = "English",

volume = "517",

pages = "5054--5056",

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T1 - MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode

AU - Chang, S. P.

AU - Chuang, R. W.

AU - Chang, S. J.

AU - Chiou, Y. Z.

AU - Lu, C. Y.

N1 - Funding Information: This work was supported by National Science Council under contract number NSC 95-2221-E-006-314 and NSC 95-2221-E-006-357-MY3. In addition, a research grant provided by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700), is also gratefully acknowledged.

PY - 2009/7/1

Y1 - 2009/7/1

N2 - The growth, fabrication, and subsequent electroluminescence (EL) characterization of an n-ZnO/p-GaN heterojunction light-emitting diode prepared on c-Al2O3 substrate are presented. The diode-like I-V characteristics and room temperature EL spectrum with an intense broadband emission in the yellow-green spectral region has been observed with forward bias applied. Photoluminescence (PL) and Raman spectra of the n-ZnO and p-GaN films were also measured. By comparing PL and EL spectra, it was concluded that the deep-level defect-related emission mainly originated from the GaN epitaxial layer.

AB - The growth, fabrication, and subsequent electroluminescence (EL) characterization of an n-ZnO/p-GaN heterojunction light-emitting diode prepared on c-Al2O3 substrate are presented. The diode-like I-V characteristics and room temperature EL spectrum with an intense broadband emission in the yellow-green spectral region has been observed with forward bias applied. Photoluminescence (PL) and Raman spectra of the n-ZnO and p-GaN films were also measured. By comparing PL and EL spectra, it was concluded that the deep-level defect-related emission mainly originated from the GaN epitaxial layer.

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DO - 10.1016/j.tsf.2009.03.059

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SP - 5054

EP - 5056

JO - Thin Solid Films

JF - Thin Solid Films

IS - 17

ER -

MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode

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