Measurement of shunt resistance and conduction band offset in Cu(In, Ga)Se2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

Craig H. Swartz, Sanjoy Paul, Lorelle M. Mansfield, Jian V. Li, Mark W. Holtz

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn1-xGaxSe2 (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the open-circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. To quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

原文English
文章編號055504
期刊Japanese Journal of Applied Physics
59
發行號5
DOIs
出版狀態Published - 2020 五月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

指紋 深入研究「Measurement of shunt resistance and conduction band offset in Cu(In, Ga)Se<sub>2</sub> solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence」主題。共同形成了獨特的指紋。

引用此