Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques

P. Morin, L. Grenouillet, N. Loubet, A. Pofelski, Darsen Lu, Q. Liu, E. Augendre, S. Maitrejean, V. Fiori, B. Desalvo, B. Doris, W. Kleemeier

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

Germanium enrichment process also known as condensation can be used for the integration of stressors in the fully depleted silicon on insulator technology. Using multi-physics modeling combined with advanced TEM characterization we studied the formation of stressors with condensation. We first observed in blanket 1D structures that the diffusion rate is substantially reduced during Ge condensation compared to the typical diffusion in neutral atmosphere. We postulate this is due to the injection of interstitial at the oxide/SiGe interface and to a reduced stress effect on the kinetics. We then studied self-aligned in plane stressors (SAIPS) formed in the source/drain region using localized Ge condensation. It is shown that the SAIPS methodology almost doubles the channel stress generated by the source drain stressor. Combining improved Si0.65Ge0.35 source/drain stressors with in-situ Si0.79Ge0.21 strained channel allows achieving a stress of-2 GPa in the p-type channel with gate first architecture.

原文English
主出版物標題Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
編輯E. P. Gusev, P. J. Timans, F. Roozeboom, S. DeGendt, K. Kakushima, V. Narayanan, Z. Karim
發行者Electrochemical Society Inc.
頁面57-65
頁數9
版本4
ISBN(電子)9781607685395
DOIs
出版狀態Published - 2015 一月 1
事件Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States
持續時間: 2015 五月 242015 五月 28

出版系列

名字ECS Transactions
號碼4
66
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
國家United States
城市Chicago
期間15-05-2415-05-28

All Science Journal Classification (ASJC) codes

  • Engineering(all)

指紋 深入研究「Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques」主題。共同形成了獨特的指紋。

引用此