TY - GEN
T1 - Mechanical and Interfacial Properties Characterization of Physical Vapor Deposited Metallic Films after Rapid Thermal Annealing for Packaging Applications
AU - Chen, Kuo Shen
AU - Yang, Tzu Hui
AU - Lee, Yu Ching
N1 - Funding Information:
This work is supported by Ministry of Science and Technology (MOST) of Taiwan (MOST-110-2221-E-006-172) and ASE Corp. (B110-K079).
Publisher Copyright:
© 2022 Japan Institute of Electronics Packaging.
PY - 2022
Y1 - 2022
N2 - This work presents the residual stress, elastic modulus, and interfacial strength characterizations of aluminum films deposited on silicon wafers after rapid thermal processing as the first step toward the reliability assessment of metallic/dielectric heterogeneous structures, which have been widely used in integrated circuits and packaging applications, for improving structural integrities. Various techniques such as curvature measurement, nano-indentation, and scratching test have been hired to conduct the investigation. It is found that the residual stress, modulus and hardness, as well as the adhesion would strongly depend on thermal processing temperature, deposition rate, and deposition thickness. In conjunction with subsequent finite element stress analysis, the obtained data would then be used as the core for improving structural design in IC and packaging structures and processing.
AB - This work presents the residual stress, elastic modulus, and interfacial strength characterizations of aluminum films deposited on silicon wafers after rapid thermal processing as the first step toward the reliability assessment of metallic/dielectric heterogeneous structures, which have been widely used in integrated circuits and packaging applications, for improving structural integrities. Various techniques such as curvature measurement, nano-indentation, and scratching test have been hired to conduct the investigation. It is found that the residual stress, modulus and hardness, as well as the adhesion would strongly depend on thermal processing temperature, deposition rate, and deposition thickness. In conjunction with subsequent finite element stress analysis, the obtained data would then be used as the core for improving structural design in IC and packaging structures and processing.
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U2 - 10.23919/ICEP55381.2022.9795368
DO - 10.23919/ICEP55381.2022.9795368
M3 - Conference contribution
AN - SCOPUS:85133307196
T3 - 2022 International Conference on Electronics Packaging, ICEP 2022
SP - 165
EP - 166
BT - 2022 International Conference on Electronics Packaging, ICEP 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st International Conference on Electronics Packaging, ICEP 2022
Y2 - 11 May 2022 through 14 May 2022
ER -