Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys

Chih Han Yang, Shiqi Zhou, Hiroshi Nishikawa, Shih Kang Lin

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

The brittle phase in Sn-58Bi significantly degrades the reliability of electronic products. Doping effective element in Sn-58Bi solder is the common approach for improving the mechanical properties. In this study, the Bi ratio was decreased and minor In were doped depending on CALPHAD results. In addition, minor Ga was doped into the solder and formed the Sn-Bi-In-Ga quaternary system. The microstructure showed the Sn phase proportion was higher than Sn-58Bi solder and it is rich some amount of In and Ga. Moreover, Ga gathered in the micro-Area. In tensile test, the new solder showed high yield strength, tensile strength and much better elongation than Sn-58Bi solder.

原文English
主出版物標題2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面409-410
頁數2
ISBN(電子)9784990218850
DOIs
出版狀態Published - 2018 六月 6
事件2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 - Kuwana, Mie, Japan
持續時間: 2018 四月 172018 四月 21

出版系列

名字2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

Other

Other2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
國家/地區Japan
城市Kuwana, Mie
期間18-04-1718-04-21

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料
  • 聚合物和塑料

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