Mechanically controllable nonlinear dielectrics

D. L. Ko, M. F. Tsai, J. W. Chen, P. W. Shao, Y. Z. Tan, J. J. Wang, S. Z. Ho, Y. H. Lai, Y. L. Chueh, Y. C. Chen, D. P. Tsai, L. Q. Chen, Y. H. Chu

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

Strain-sensitive BaxSr1−xTiO3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba0.5Sr0.5TiO3 (BSTO) and ferroelectric BaTiO3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.

原文English
文章編號eaaz3180
期刊Science Advances
6
發行號10
DOIs
出版狀態Published - 2020

All Science Journal Classification (ASJC) codes

  • 多學科

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