Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

Jone-Fang Chen, Kuen Shiuan Tian, Shiang Yu Chen, J. R. Lee, Kuo Ming Wu, C. M. Liu

研究成果: Article

7 引文 (Scopus)

摘要

The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current (Ig) consists mainly of electron injection, Ig correlates well with device degradation. As a result, a lifetime prediction method based on Ig is presented for the purpose of projecting hot-carrier lifetime in LDMOS transistors.

原文English
文章編號243501
期刊Applied Physics Letters
92
發行號24
DOIs
出版狀態Published - 2008 六月 30

指紋

metal oxide semiconductors
transistors
degradation
life (durability)
predictions
injection
carrier lifetime
hot electrons
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

Chen, Jone-Fang ; Tian, Kuen Shiuan ; Chen, Shiang Yu ; Lee, J. R. ; Wu, Kuo Ming ; Liu, C. M. / Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors. 於: Applied Physics Letters. 2008 ; 卷 92, 編號 24.
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Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors. / Chen, Jone-Fang; Tian, Kuen Shiuan; Chen, Shiang Yu; Lee, J. R.; Wu, Kuo Ming; Liu, C. M.

於: Applied Physics Letters, 卷 92, 編號 24, 243501, 30.06.2008.

研究成果: Article

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AU - Lee, J. R.

AU - Wu, Kuo Ming

AU - Liu, C. M.

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