Mechanism and modeling of on-resistance degradation in n-type lateral diffused metal-oxide-semiconductor transistors

In this study, on-resistance (R_on) degradation induced by hot-carrier injection in n-type lateral diffused metal-oxide-semiconductor transistors with shallow trench isolation (STI) in the drift region is investigated. R_on unexpectedly decreases at the beginning of stress, although R_on increases as the stress time becomes longer. Experimental data and results of technology computer-aided-design simulations reveal that hot-hole injection and trapping at the STI corner closest to the channel is responsible for the R_on reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the R_on increase. An R_on degradation model including the effect of hole trapping and interface trap generation is also discussed and verified with experimental data.