Mechanism investigation of p-i-n ZnO-based light-emitting diodes

Ching Ting Lee, Yung Hao Lin, Li Wen Lai, Li Ren Lou

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Using a cosputtering technique to deposit P-ZnO : AlN film and using a vapor cooling condensation system to deposit n-ZnO:In and i-ZnO films on sapphire substrates, thin-film-type ZnO-based light-emitting diodes (LEDs) were fabricated. A Nd : YAG laser with a wavelength of 413 nm is utilized to identify the defect-related emissions of p-ZnO, i-ZnO, and n-ZnO films. The characteristics of i-ZnO layer of ultraviolet (UV) emissions were analyzed using temperature-dependent photoluminescence. The mechanism of the UV electroluminescence emission peak at 3.20 eV observed from the p-i-n ZnO-based LEDs were attributed to the low deep-level defects and the radiative recombination occurred in the i-ZnO layer.

原文English
文章編號5313901
頁(從 - 到)30-32
頁數3
期刊IEEE Photonics Technology Letters
22
發行號1
DOIs
出版狀態Published - 2010 一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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