Mechanism of forming (2 2 0/2 0 4)-oriented CuInSe2 film on Al:ZnO substrate using a two-step selenization process

Jia Feng Fang, Dung-Ching Perng, Jhin Wei Chen

研究成果: Article

11 引文 斯高帕斯(Scopus)

摘要

A (2 2 0/2 0 4)-preferred CuInSe2 (CIS) film formed using a two-step selenization process is reported, and the growth mechanism is explained. The CIS (2 2 0/2 0 4)-oriented film was grown on an Al:ZnO (AZO) coated glass for superstrate-type solar cell applications. The selenization temperature, Se vapor pressure, and reactive mechanisms of each selenization step were investigated. The first-step selenization at 400 °C favors the CIS (1 1 2) growth as the selenization time increases. For the second-step selenization, a high temperature (≥550 °C) and high Se vapor pressure throughout the process have a strong influence in promoting the CIS (2 2 0/2 0 4) growth. The oxygen in the self-formed In2O3 layer at the AZO interface can be replaced by selenium, and transforms to an In 2Se3 (3 0 0)-preferred film, which favors the CIS (2 2 0/2 0 4) formation, in a transient and high Se vapor pressure selenization process. A Cu-rich surface, which is the usual case for selenizing precursor and which favors the CIS (1 1 2) growth, can be optimized to promote the CIS (2 2 0/2 0 4) growth by adding a thin In layer onto a slightly Cu-rich Cu/In precursor.

原文English
頁(從 - 到)106-112
頁數7
期刊Journal of Crystal Growth
321
發行號1
DOIs
出版狀態Published - 2011 四月 15

    指紋

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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