Mechanisms and high performances of chlorine-treated GaN ultraviolet photodetectors

Ching Ting Lee, Hsin Ying Lee, Chih Chien Lin, Po Sung Chen

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

A chlorination surface treatment was used to reduce the surface states of an n-type GaN surface, which improves the Schottky performances of the resultant metal-semiconductor contact. At a reverse bias of 10V, the dark current of the GaN-based UV-PDs with and without chlorinated surface treated were 28.1nA and 0.59μA, respectively. The dark current of chlorine-treated Schottky UV-PDs was 21 times of magnitude smaller than that of those without chlorination treatment. The product of quantum efficiency and internal gain of the GaN Schottky UV-PDs without and with chlorination treatment under a reverse voltage of 10V at a wavelength of 330nm was 650% and 100%, respectively. The internal gain of chlorine-treated GaN UV-PDs can be reduced due to the improvement of surface state density.

原文English
主出版物標題Optoelectronic Devices and Integration II
DOIs
出版狀態Published - 2008 三月 31
事件Optoelectronic Devices and Integration II - Beijing, China
持續時間: 2007 十一月 122007 十一月 15

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6838
ISSN(列印)0277-786X

Other

OtherOptoelectronic Devices and Integration II
國家China
城市Beijing
期間07-11-1207-11-15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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