Mechanisms of hot-carrier-induced threshold-voltage shift in high-voltage p-type LDMOS transistors

Jone F. Chen; Kuen Shiuan Tian; Shiang Yu Chen; Kuo Ming Wu; J. R. Shih; Kenneth Wu

doi:10.1109/TED.2009.2030442

Mechanisms of hot-carrier-induced threshold-voltage shift in high-voltage p-type LDMOS transistors

Jone F. Chen, Kuen Shiuan Tian, Shiang Yu Chen, Kuo Ming Wu, J. R. Shih, Kenneth Wu

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

The phenomena and mechanisms of hot-carrier-induced threshold-voltage (V _T ) shift in high-voltage p-type laterally diffused MOS (LDMOS) transistors are investigated. At low-|V _gs| (absolute value of gate voltage) stress condition, electrons are injected and trapped in the gate oxide at the channel region near the drain, resulting in V _T increase (Δ|V _T| < 0). At high-|V _gs| stress condition, however, severe VT decrease (Δ|VT

原文	English
文章編號	5280275
頁（從 - 到）	3203-3206
頁數	4
期刊	IEEE Transactions on Electron Devices
卷	56
發行號	12
DOIs	https://doi.org/10.1109/TED.2009.2030442
出版狀態	Published - 2009 12月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/TED.2009.2030442

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abstract = "The phenomena and mechanisms of hot-carrier-induced threshold-voltage (V T ) shift in high-voltage p-type laterally diffused MOS (LDMOS) transistors are investigated. At low-|V gs| (absolute value of gate voltage) stress condition, electrons are injected and trapped in the gate oxide at the channel region near the drain, resulting in V T increase (Δ|V T| < 0). At high-|V gs| stress condition, however, severe VT decrease (Δ|VT",

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AU - Chen, Jone F.

AU - Tian, Kuen Shiuan

AU - Chen, Shiang Yu

AU - Wu, Kuo Ming

AU - Shih, J. R.

AU - Wu, Kenneth

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The phenomena and mechanisms of hot-carrier-induced threshold-voltage (V T ) shift in high-voltage p-type laterally diffused MOS (LDMOS) transistors are investigated. At low-|V gs| (absolute value of gate voltage) stress condition, electrons are injected and trapped in the gate oxide at the channel region near the drain, resulting in V T increase (Δ|V T| < 0). At high-|V gs| stress condition, however, severe VT decrease (Δ|VT

AB - The phenomena and mechanisms of hot-carrier-induced threshold-voltage (V T ) shift in high-voltage p-type laterally diffused MOS (LDMOS) transistors are investigated. At low-|V gs| (absolute value of gate voltage) stress condition, electrons are injected and trapped in the gate oxide at the channel region near the drain, resulting in V T increase (Δ|V T| < 0). At high-|V gs| stress condition, however, severe VT decrease (Δ|VT

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Mechanisms of hot-carrier-induced threshold-voltage shift in high-voltage p-type LDMOS transistors

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