The i-ZnO film and n-ZnO:Al film were deposited on n-GaN layer using vapor cooling condensation system and sputter, respectively. The dark current of the resulting p-GaN/i-ZnO/n-ZnO:Al-heterostructured photodetectors was 4.11 pA. The rejection ratio between ultraviolet wavelength at 360 nm and visible wavelength at 420 nm was 3.0× 103 at a zero bias voltage. The low frequency noise exhibited the flicker noise (1/f) behaviors. With a reverse bias of-5 V, the flicker noise power density was about 2.51 × 10 -25A2, which corresponded to the high detectivity of 1.71 × 1011cmHz1/2 ċW-1. The flicker noise was the dominant noise source of the photodetectors.
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